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rda microelectronics, inc. RDAT212 rf front-end module the information contained herein is the exclusive property of rda and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of rda. page 1 of 11 p p r r e e l l i i m m i i n n a a r r y y d d a a t t a a s s h h e e e e t t v v 0 0 . . 4 4 2007-04-18 RDAT212 rf front-end module for bluetooth wireless communication
rda microelectronics, inc. RDAT212 rf front-end module the information contained herein is the exclusive property of rda and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of rda. page 2 of 11 RDAT212 for bluetooth (2400~2500mhz) function block diagram pin assignment pin name definition pin number pin name 1 painn pa rf in negative 2 painp pa rf in positive and pa bypass function 3 pd power detector 4 lnaout lna output and lna bypass function 5 swpa switch pa control 6 swlna switch lna control 7 swrx switch rx control 8 swtx switch tx control 9 ant antenna port 10 nc not connected 11 nc not connected 12 nc not connected 13 lnavcc lna power supply 14 pavcc2 pa power supply for 2nd stage 15 vcb pa bias power supply 16 pavcc2 pa power supply for 1st stage the RDAT212 includes a power amplifier, a low noise amplifier and an antenna switch. the pa and the lna are manufactured on hbt and hemt process respectively. this chip is designed for bluetooth high power application. the package of this chip is 3 3mm 2 mlpq (qfn) * with 16 pins. pa and lna bypass function is available for class 2 application. shutdown function o f pa and lna is implemented. power detector is integrated to monitor the output power. features l pa +lna+ antenna sw i tch l 18dbm linear power@-30dbc im3 l integrate power detector l 2.6db noise figure and 8dbm iip3 lna l pa and lna bypass function l input/output m atched @ 50 ? l low supply vo l tage (3.0 v ) function block diagram pin assignment
rda microelectronics, inc. RDAT212 rf front-end module the information contained herein is the exclusive property of rda and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of rda. page 3 of 11 preliminary electrical target specifications the following tables list the electrical characteristics of the RDAT212. table 1 lists the absolute maximum ratings. table 2 is the logic function table. table 3, 4, 5 show the electrical specifications for bluetooth nominal operating conditions. table 1. absolute maximum ratings parameter rating unit supply voltage (rf off) +6 v control voltage +4 v input rf power 10 dbm operating case temperature -40 to +85 c storage temperature -55 to +150 c table 2. logic function table mode swpa swlna swrx swtx pa on 2.8~3.0v 0 0 >2.5v lna on 0 2.8~3.0v >2.5 0 pa bypass 0 0 0v >2.5v lna bypass 0 0 >2.5v 0 table 3. electrical specifications for power amplifier (pavcc1=pavcc2=vcb=lnavcc=3.3v, swpa=2.8v, swlna=0v, swrx=0v, swtx=2.8v, f=2.45ghz, ta=25 , zg=zl=50 ) characteristics test condition min. typ. max. unit operating frequency 2400 - 2500 mhz quiescent current 20 ma supply current pout=20dbm 100 ma power gain pout=20dbm 20 db input s11 pin=-30dbm -20 -10 db output s22 pin=-30dbm -15 -6 db bias current pout=20dbm 4 ma im3 pout=18dbm -30 dbc harmonics -50 dbc
rda microelectronics, inc. RDAT212 rf front-end module the information contained herein is the exclusive property of rda and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of rda. page 4 of 11 table 4. electrical specifications for pa bypass mode (pavcc1=pavcc2=vcb=lnavcc=3.3v, swpa=0v, swlna=0v, swrx=0v, swtx=2.8v, f=2.45ghz, ta=25 , zg=zl=50 ) characteristics test condition min. typ. max. unit operating frequency 2400 - 2500 mhz input s11 pin=-30dbm -20 -10 db output s22 pin=-30dbm -20 -10 db insertion loss 3.6 db table 5. electrical specifications for lna mode (pavcc1=pavcc2=vcb=lnavcc=3.3v, swpa=0v, swlna=3v, swrx=3v, swtx=0v, f=2.45ghz, ta=25 , zg=zl=50 ) characteristics test condition min. typ. max. unit operating frequency 2400 - 2500 mhz quiescent current 4.5 ma power gain 10 db input s11 pin=-30dbm -20 -10 db output s22 pin=-30dbm -20 -10 db nf 2.6 db iip3 8 dbm table 6. electrical specifications for lna bypass mode (pavcc1=pavcc2=vcb=lnavcc=3.3v, swpa=0v, swlna=0v, swrx=3v, swtx=0v, f=2.45ghz, ta=25 , zg=zl=50 ) characteristics test condition min. typ. max. unit operating frequency 2400 - 2500 mhz input s11 pin=-30dbm -20 -10 db output s22 pin=-30dbm -20 -10 db insertion loss 2.6 db
rda microelectronics, inc. RDAT212 rf front-end module the information contained herein is the exclusive property of rda and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of rda. page 5 of 11 pa performance (pavcc1=pavcc2=vcb=lnavcc=3.3v, swpa=2.8v, swlna=0v, swrx=0v, swtx=2.8v, f=2.45ghz, ta=25 , zg=zl=50 , temperature sweep -20~80 ) 1tone_pout vs. pin -5 0 5 10 15 20 25 -20 -15 -10 -5 0 5 pin(dbm) 1 t o n e _ p o u t ( d b m ) t=-20 t=5 t=25 t=50 t=80 gain vs. pout 16.5 17 17.5 18 18.5 19 19.5 20 20.5 21 -5 0 5 10 15 20 25 pout(dbm) g a i n ( d b ) t=-20 t=5 t=25 t=50 t=80 p2h vs. pout -70 -65 -60 -55 -50 -5 0 5 10 15 20 25 pout(dbm) p 2 h ( d b c ) t=-20 t=5 t=25 t=50 t=80 p3h vs. pout -90 -85 -80 -75 -70 -65 -60 -55 -50 -5 0 5 10 15 20 25 pout(dbm) p 3 h ( d b c ) t=-20 t=5 t=25 t=50 t=80 im3 vs. pout -45 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 pout(dbm) i m 3 ( d b c ) t=-20 t=5 t=25 t=50 t=80 im5 vs. pout -80 -70 -60 -50 -40 -30 -20 -5 0 5 10 15 20 25 pout(dbm) i m 5 ( d b c ) t=-20 t=5 t=25 t=50 t=80 fig1. 1_tone pout vs. pin fig2. gain vs. 1_tone pout fig3. 2 nd harmonic vs. 1_tone pout fig4. 3 rd harmonic vs. 1_tone pout fig5. 3 rd intermodulation vs. pout fig6. 5 th intermodulation vs. pout
rda microelectronics, inc. RDAT212 rf front-end module the information contained herein is the exclusive property of rda and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of rda. page 6 of 11 icc vs. pout 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 -5 0 5 10 15 20 25 pout(dbm) i c c ( a ) t=-20 t=5 t=25 t=50 t=80 pae vs. pout 0 5 10 15 20 25 30 35 40 45 50 -5 0 5 10 15 20 25 pout(dbm) p a e ( % ) t=-20 t=5 t=25 t=50 t=80 power detector performance (pavcc1=pavcc2=vcb=lnavcc=3.3v, swpa=2.8v, swlna=0v, swrx=0v, swtx=2.8v, f=2.45ghz, ta=25 , zg=zl=50 , temperature sweep -20~80 ) pd vs. pout 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -5 0 5 10 15 20 25 pout(dbm) p d ( v ) t=-20 t=5 t=25 t=50 t=80 lna performance (pavcc1=pavcc2=vcb=lnavcc=3.3v, swpa=0v, swlna=3v, swrx=3v, swtx=0v, f=2.45ghz, ta=25 , zg=zl=50 , temperature sweep -20~80 ) noise vs. freq 0 0.5 1 1.5 2 2.5 3 3.5 2.1 2.2 2.3 2.4 2.5 2.6 2.7 freq (ghz) n o i s e f i g u r e ( d b ) im3 vs. pin -60 -55 -50 -45 -40 -35 -30 -20 -15 -10 -5 pin(dbm) i m 3 ( d b c ) t=-20 t=5 t=25 t=50 t=80 fig9. icc vs. pout fig10. pae vs. pout fig12. noise figure vs. frequency fig13. 3 rd intermodulation vs. pin fig11. power detector vs. pout
rda microelectronics, inc. RDAT212 rf front-end module the information contained herein is the exclusive property of rda and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of rda. page 7 of 11 test circuit for RDAT212 recommended pcb layout component value c1 1000 pf c2 1000 pf c3 1000 pf c4 1000 pf c5 820 pf c6 680 pf c8 1000 pf c9 10 uf c10 100 pf r1 0 (tuning pa gain)
rda microelectronics, inc. RDAT212 rf front-end module the information contained herein is the exclusive property of rda and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of rda. page 8 of 11 package dimensions and pin descriptions unit:mm pin1 pad corner top view bottom view side view RDAT212
rda microelectronics, inc. RDAT212 rf front-end module the information contained herein is the exclusive property of rda and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of rda. page 9 of 11 recommended pcb land pattern fig. pcb land pattern for 16-pin mlpq fig. recommended temperature sn95.5ag4.0cu0.5 30 300 250 200 150 100 50 0 0 60 90 120 150 180 210 240 270 300 p reheat 120~180 heating up ratio 1~3 /sec 60~130sec 30~70sec more than 230 for 10~30sec peak-temp at 230~250 reflow 220
rda microelectronics, inc. RDAT212 rf front-end module the information contained herein is the exclusive property of rda and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of rda. page 10 of 11 rohs compliant the product does not contain lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (pbb) or polybrominated diphenyl ethers (pbde), and are therefore considered rohs compliant.
rda microelectronics, inc. RDAT212 rf front-end module the information contained herein is the exclusive property of rda and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of rda. page 11 of 11 disclaimer the information provided here is believed to be reliable; rda microelectronics assumes no reliability for inaccuracies and omissions. rda microelectronics assumes no reliability for the use of this information and all such information should entirely be at the user s own risk. specifications described and contained here are subjected to change without notice on the purpose of improving the design and performance. all of this information described herein should not be implied or granted for any third party. rda microelectronics does not authorize or warrant any rda products for use in the life support devices or systems. copyright@2005 rda microelectronics inc. all rights reserved revision 0.4, apr. 2007 for technical questions and additional information about rda microelectronics inc.: website: www.rdamicro.com mailbox: info@rdamicro.com rda microelectronics (shanghai), inc. rda microelectronics (beijing), inc. tel: +86-21-50271108 tel: +86-10-63635360 fax: +86-21-50271099 fax: +86-10-82612663

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